Hourai, Masataka: search on Z-Library

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1

[ECS 209th ECS Meeting - Denver, Colorado (May 7-May 12, 2006)] ECS Transactions - Defect Formation Behaviors in Heavily Doped Czochralski Silicon

Sugimura, Wataru, Ono, Toshiaki, Umeno, Shigeru, Hourai, Masataka, Sueoka, Koji

Year:

2006

Language:

english

File:

PDF, 372 KB

english, 2006

2

Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration

Kajiwara, Kaoru, Harada, Kazuhiro, Torigoe, Kazuhisa, Hourai, Masataka

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 736 KB

english, 2019

3

Nitrogen effect on grown-in defects in Czochralski silicon crystals

Shigeru Umeno, Toshiaki Ono, Tadami Tanaka, Eiichi Asayama, Hideshi Nishikawa, Masataka Hourai, Hisashi Katahama, Masakazu Sano

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 106 KB

english, 2002

4

Formation of Grown-in Defects during Czochralski Silicon Crystal Growth

Nishikawa, Hideshi, Tanaka, Tadami, Yanase, Yoshio, Hourai, Masataka, Sano, Masakazu, Tsuya, Hideki

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 923 KB

english, 1997

5

Relationship between Grown-in Defects in Czochralski Silicon Crystals

Umeno, Shigeru, Okui, Masahiko, Hourai, Masataka, Sano, Masakazu, Tsuya, Hideki

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 1.60 MB

1997

6

Review and Comments for the Development of Point Defect-Controlled CZ-Si Crystals and Their Application to Future Power Devices

Hourai, Masataka, Nagashima, Toru, Nishikawa, Hideshi, Sugimura, Wataru, Ono, Toshiaki, Umeno, Shigeru

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 4.22 MB

english, 2018

7

Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

Sadamitsu, Shinsuke, Umeno, Shigeru, Koike, Yasuo, Hourai, Masataka, Sumita, Shigeo, Shigematsu, Tatsuhiko

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 2.66 MB

1993

8

Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czochralski Silicon Crystals

Umeno, Shigeru, Yanase, Yoshio, Hourai, Masataka, Sano, Masakazu, Shida, Yoshiaki, Tsuya, Hideki

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 3.69 MB

english, 1999

9

Characterization of Defects in CZ-grown Si Crystals with OSF Ring

Ogushi, Satoshi, Hourai, Masataka, Shigematsu, Tatuhiko

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 1.63 MB

english, 1992

10

A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer

Hourai, Masataka, Naridomi, Toshio, Oka, Yasunori, Murakami, Katsumi, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio

Journal:

Japanese Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 268 KB

english, 1988

11

Formation Behavior of Infrared Light Scattering Defects in Silicon during Czochralski Crystal Growth

Hourai, Masataka

Journal:

Journal of The Electrochemical Society

Year:

1995

Language:

english

File:

PDF, 1.28 MB

english, 1995

12

Interface fluctuations in Czochralski crystal growth

Miyano, Takaya, Shintani, Akira, Kanda, Tadashi, Hourai, Masataka

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.19 MB

english, 1995

13

Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019)

Hourai, Masataka, Nagashima, Toru, Nishikawa, Hideshi, Sugimura, Wataru, Ono, Toshiaki, Umeno, Shigeru

Journal:

physica status solidi (a)

Year:

2019

File:

PDF, 424 KB

2019

14

Characterization of complexities in Czochralski crystal growth by nonlinear forecasting

Miyano, Takaya, Morita, Hiroshi, Shintani, Akira, Kanda, Tadashi, Hourai, Masataka

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.58 MB

english, 1994

15

Bifurcation structure of the Belousov-Zhabotinskii reaction in a stirred flow reactor

Hourai, Masataka, Kotake, Yashige, Kuwata, Keiji

Journal:

Journal of Physical Chemistry

Year:

1985

Language:

english

File:

PDF, 511 KB

english, 1985

16

Theoretical study of hydrogen impact on concentration of intrinsic point defects during Czochralski Si crystal growth

Kusunoki, Takuya, Sueoka, Koji, Sugimura, Wataru, Hourai, Masataka

Journal:

Journal of Crystal Growth

Year:

2020

File:

PDF, 196 KB

2020

17

Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZSi crystals

Kieran Marsden, Tadashi Kanda, Masahiko Okui, Masataka Hourai, Tatsuhiko Shigematsu

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 527 KB

english, 1996

18

Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

Nishimoto, Manabu, Nakamura, Kozo, Hourai, Masataka, Ono, Toshiaki, Sugimura, Wataru, Motooka, Teruaki

Journal:

Journal of the Japan Institute of Metals

Year:

2011

File:

PDF, 6.65 MB

2011

19

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Hourai, Masataka, Asayama, Eiichi, Nishikawa, Hideshi, Nishimoto, Manabu, Ono, Toshiaki, Okui, Masahiko

Journal:

Journal of Electronic Materials

Year:

2020

File:

PDF, 1.46 MB

2020

20

[ECS 209th ECS Meeting - Denver, Colorado (May 7-May 12, 2006)] ECS Transactions - Wafer Strength and Slip Generation Behavior in 300 mm Wafers

Ono, Toshiaki, Sugimura, Wataru, Kihara, Takayuki, Hourai, Masataka

Year:

2006

Language:

english

File:

PDF, 296 KB

english, 2006

21

Influence of melt-temperature fluctuations on striation formation in large-scale Czochralski Si growth systems

Tadashi Kanda, Masataka Hourai, Shinichiro Miki, Tatsuhiko Shigematsu, Hajime Tomokage, Takaya Miyano, Hiroshi Morita, Akira Shintani

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 433 KB

english, 1996

22

Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals

Umeno, Shigeru, Sadamitsu, Shinsuke, Murakami, Hiroki, Hourai, Masataka, Sumita, Shigeo, Shigematsu, Tatsuhiko

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 403 KB

english, 1993

23

Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface

Sadamitsu, Shinsuke, Sasaki, Ayako, Hourai, Masataka, Sumita, Shigeo, Fujino, Nobukatsu

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 2.46 MB

1991

24

Simultaneous relapse of Basedow's disease in a patient with adult-onset Still's disease

TORIGOE, Masataka, MIYAMURA, Tomoya, NAKAMURA, Masataka, HOURAI, Yoshirou, HIRATA, Yoshie, ANDO, Jin, TAKAHAMA, Soichiro, MINAMI, Rumi, YAMAMOTO, Masahiro, SUEMATSU, Eiichi

Journal:

Japanese Journal of Clinical Immunology

Year:

2011

Language:

english

File:

PDF, 439 KB

english, 2011

25

Dynamical behaviour of Czochralski melts and its influence on crystal growth

Takaya Miyano, Shu-ichi Inami, Akira Shintani, Tadashi Kanda, Masataka Hourai

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 387 KB

english, 1996

26

Investigation of Grown-in Defect Formation in Czochralski Silicon Crystals by Optical Precipitate Profiler

Kanda, Tadashi, Hourai, Masataka, Tomokage, Hajime

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 507 KB

1997

27

TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface

Sadamitsu, Shinsuke, Sano, Masakazu, Hourai, Masataka, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 1.30 MB

1989

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